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FDPF51N25YDTU دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | FDPF51N25YDTU |
|---|---|
| حجم فایل | 70.016 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 13 |
دانلود دیتاشیت FDPF51N25YDTU |
دانلود دیتاشیت |
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سایر مستندات
FDP51N25, FDPF51N25 13 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDPF51N25YDTU
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 38W
- Total Gate Charge (Qg@Vgs): 55nC@10V
- Drain Source Voltage (Vdss): 250V
- Input Capacitance (Ciss@Vds): 2.62nF@25V
- Continuous Drain Current (Id): 51A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 63pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 48mΩ@10V,25.5A
- Package: TO-220
- Manufacturer: onsemi
- Series: UniFET™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3 (Y-Forming)
- Package / Case: TO-220-3 Full Pack, Formed Leads
- Base Part Number: FDPF5
- detail: N-Channel 250V 51A (Tc) 38W (Tc) Through Hole TO-220F-3 (Y-Forming)